Cheng Guo-an
Key Laboratory in University for Radiation Beam Technology and Materials Modification, Dept. of Materials Science & Engineering, Institute of Low Energy Nuclear Physics, Beijing Normal University, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2005 Mar;25(3):351-5.
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique. The photoluminescence spectra in the layers doped with ions of La, Ce and Nd were obtained at room temperature. At the same time, the up-conversion luminescence in the doped layers was observed. The intensities of both the luminescence and the up-conversion luminescence increased with increasing the doping dose and the treatment temperature. However, the intensities of the luminescence decreased with increasing the exciting wavelength between 220 nm and 300 nm; the intensities of the up-conversion luminescence increased with increasing the exciting wavelength between 600 nm and 800 nm. It was indicated that the luminescence and the up-conversion luminescence in the layers doped with ions of La, Ce and Nd depended on the doping dose, the heat treatment temperature and the exciting wavelength.
采用离子束技术研究了稀土掺杂硅的光致发光特性。在室温下获得了掺杂La、Ce和Nd离子层的光致发光光谱。同时，观察到了掺杂层中的上转换发光。发光和上转换发光的强度均随掺杂剂量和处理温度的增加而增加。然而，在220nm至300nm之间，发光强度随激发波长的增加而降低；在600nm至800nm之间，上转换发光强度随激发波长的增加而增加。结果表明，掺杂La、Ce和Nd离子层中的发光和上转换发光取决于掺杂剂量、热处理温度和激发波长。
