Park J Y, Seo J H, Whang C N, Kim S S, Choi D S, Chae K H
Institute of Physics and Applied Physics, Yonsei University, Seoul, Korea.
J Chem Phys. 2005 Jun 22;122(24):244723. doi: 10.1063/1.1947767.
The atomic structure of Al layer on Si(001)-(2 x 1) surface has been studied by coaxial impact collision ion scattering spectroscopy. When 0.5 monolayer (ML) of Al atoms are adsorbed on Si(001) at room temperature, it is found that Al adatoms are dimerized and Al ad-dimers are oriented parallel to the underlying Si dimers at the position of centering T3 site with a height of 1.02 Angstroms from the first layer of Si(001). The bond length of the Al dimer is 2.67 Angstroms. With increasing Al coverage up to one ML, Al ad-dimers still occupied near T3 site and the next favorable site is near HH site.
