Vijayaraghavan Aravind, Kanzaki Kenichi, Suzuki Saturo, Kobayashi Yoshihiro, Inokawa Hiroshi, Ono Yukinori, Kar Swastik, Ajayan Pulickel M
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan, and Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
Nano Lett. 2005 Aug;5(8):1575-9. doi: 10.1021/nl0509935.
We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and metallic single-electron transistor characteristics at low temperatures, when exposed to an electron beam, exhibited ambipolar field effect transistor (room temperature) and single-electron transistor (low temperature) characteristics. This metal-semiconductor transition is attributed to inhomogeneous electric fields arising from charging during electron irradiation.
我们报告了低能（1 keV）电子束辐照对由金属单壁碳纳米管构建的栅控三端器件的影响。原始器件在室温下表现出可忽略不计的栅极电压响应，在低温下具有金属单电子晶体管特性，当暴露于电子束时，表现出双极场效应晶体管（室温）和单电子晶体管（低温）特性。这种金属 - 半导体转变归因于电子辐照期间充电产生的不均匀电场。
