Vella Angela, Intartaglia Romuald, Blanc Christophe, Smalyukh Ivan I, Lavrentovich Oleg D, Nobili Maurizio
GDPC (UMR 5581) CNRS, Université de Montpellier-II, CC026, Place Eugéne Bataillon, F-34095 Montpellier Cedex 05, France.
Phys Rev E Stat Nonlin Soft Matter Phys. 2005 Jun;71(6 Pt 1):061705. doi: 10.1103/PhysRevE.71.061705. Epub 2005 Jun 17.
Disclinations in nematic liquid crystals usually adopt a straight shape in order to minimize their elastic energy. Once created in the course of a nonequilibrium process such as a temperature quench from the isotropic to the nematic phase, the topologically stable disclinations of half-integer strength either annihilate each other in pairs of opposite strength or form topologically unstable disclinations of integer strength. In this article, we demonstrate that the annihilation process can be inhibited and the defects can be deformed by an applied electric field. We study the disclination lines in the deep uniaxial nematic phase, located at the boundary between two different types of walls, the so-called pi wall (a planar soliton stabilized by the surface anchoring) and the Brochard-Léger (BL) wall stabilized by the applied electric field. By changing the electric voltage, one can control the energy of director deformations associated with the two walls and thus control the deformation and dynamics of the disclination line. At small voltages, the disclinations are straight lines connecting the opposite plates of the cell, located at the two ends of the pi walls. The pi walls tend to shrink. When the voltage increases above E(F), the Fréedericksz threshold, the BL walls appear and connect pairs of disclinations along a path complementary to the pi wall. At E>2 E(F), the BL walls store sufficient energy to prevent shrinking of the pi walls. Reconstruction of the three-dimensional director configuration using a fluorescent confocal polarizing microscopy demonstrates that the disclinations are strongly bent in the region between the pi and the BL walls. The distortions and the related dynamics are associated with the transformation of the BL wall into two surface disclination lines; we characterize it experimentally as a function of the applied electric field, the cell thickness, and the sample temperature. A simple model captures the essential details of the experimental data.
向列型液晶中的位错通常呈直线形状,以使其弹性能最小化。在非平衡过程(如从各向同性相到向列相的温度猝灭)中产生后,半整数强度的拓扑稳定位错要么以相反强度成对相互湮灭,要么形成整数强度的拓扑不稳定位错。在本文中,我们证明了通过施加电场可以抑制湮灭过程并使缺陷变形。我们研究了位于两种不同类型壁(即所谓的π壁,一种由表面锚定稳定的平面孤子,以及由施加电场稳定的布罗沙尔 - 莱热(BL)壁)边界处的深单轴向列相中的位错线。通过改变电压,可以控制与这两种壁相关的指向矢变形的能量,从而控制位错线的变形和动力学。在低电压下,位错是连接液晶盒相对极板的直线,位于π壁的两端。π壁倾向于收缩。当电压增加到超过弗雷德里克斯阈值E(F)时,BL壁出现并沿着与π壁互补的路径连接位错对。当E > 2E(F)时,BL壁存储足够的能量以防止π壁收缩。使用荧光共焦偏振显微镜对三维指向矢构型的重建表明,位错在π壁和BL壁之间的区域强烈弯曲。畸变及相关动力学与BL壁转变为两条表面位错线有关;我们通过实验将其表征为施加电场、液晶盒厚度和样品温度的函数。一个简单模型捕捉了实验数据的基本细节。