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氧化锗中含氧表面缺陷的光致发光:一项理论研究。

Photoluminescence of oxygen-containing surface defects in germanium oxides: a theoretical study.

作者信息

Zyubin A S, Mebel A M, Lin S H

机构信息

Institute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166, Taipei 106, Taiwan.

出版信息

J Chem Phys. 2005 Jul 22;123(4):044701. doi: 10.1063/1.1940027.

Abstract

Photoabsorption and photoluminescence properties of nonbridging oxygen -O-Getriple bond, -OO-Ge[triple bond] (peroxy radical), O=Ge=, and (O2)Ge= defects in germanium oxides have been investigated by high-level ab initio calculations. Geometry optimization for excited electronic states of model clusters simulating these defects was carried out at the complete-active-space self-consistent-field level, and relative energies were calculated by various methods including time-dependent density-functional theory, outer-valence Green's functions, equation-of-motion coupled cluster theory with single and double excitations, symmetry-adapted cluster configuration interaction, multireference second-order perturbation theory, and multireference configuration interaction. The results demonstrate that the considered excited states of the aforementioned defects normally exhibit large Stokes shifts and that, with few exceptions, UV photoabsorption is accompanied by red or IR photoluminescence.

摘要

通过高水平的从头算计算,研究了锗氧化物中非桥氧-O-Ge≡(NBO)、-OO-Ge≡(过氧自由基)、O=Ge=和(O₂)Ge=缺陷的光吸收和光致发光特性。在完全活性空间自洽场水平上对模拟这些缺陷的模型团簇的激发电子态进行了几何优化,并通过多种方法计算了相对能量,包括含时密度泛函理论、外价格林函数、含单双激发的运动方程耦合簇理论、对称适配簇组态相互作用、多参考二阶微扰理论和多参考组态相互作用。结果表明,上述缺陷的考虑激发态通常表现出较大的斯托克斯位移,并且除了少数例外,紫外光吸收伴随着红色或红外光致发光。

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