Zyubin A S, Mebel A M, Lin S H
Institute of Atomic and Molecular Sciences, Academia Sinica, P.O. Box 23-166, Taipei 106, Taiwan.
J Phys Chem A. 2007 Sep 27;111(38):9479-85. doi: 10.1021/jp072314f. Epub 2007 Jul 13.
Photoabsorption and photoluminescence properties of single and double oxygen vacancy (OV and DOV) defects in quartz-like germanium oxide have been investigated by high-level ab initio calculations. It has been found that photoabsorption for these systems occurs at lower energies as compared to the analogous defects in SiO(2). For OV, the lowest electronic excitations with high oscillator strengths have energies of 6.7-7.0 eV, whereas for DOV, the lowest-energy photoabsorption band is calculated to be in the range of 5.5-5.9 eV. Significant geometry relaxation and large Stokes shift are inherent for these excited states and, as a result, their photoluminescence bands are predicted to peak at 3.1-3.3 eV for OV and at 2.6 eV for DOV. The double oxygen vacancy is suggested to be the most suitable candidate for generating bright blue photoluminescence observed experimentally for substoichiometric quartz-like GeO(2) nanowires, as the calculated optical properties of DOV are in close agreement with the features found in experiment.
通过高水平的从头算计算,研究了类石英氧化锗中单个和双个氧空位(OV和DOV)缺陷的光吸收和光致发光特性。研究发现,与SiO₂中的类似缺陷相比,这些体系的光吸收发生在更低的能量处。对于OV,具有高振子强度的最低电子激发能量为6.7 - 7.0 eV,而对于DOV,计算得出的最低能量光吸收带在5.5 - 5.9 eV范围内。这些激发态具有显著的几何弛豫和大的斯托克斯位移,因此,预测它们的光致发光带在OV时峰值为3.1 - 3.3 eV,在DOV时峰值为2.6 eV。双氧空位被认为是在实验中观察到的亚化学计量类石英GeO₂纳米线产生亮蓝色光致发光的最合适候选者,因为DOV的计算光学性质与实验中发现的特征非常吻合。