[Mean temperature of electron determined by atomic hydrogen emission line in EACVD].

The process of atomic hydrogen emission in CH4/H2 gas mixture in EACVD is simulated by Monte Carlo method. In the simulation the collision between electron and H2 molecule has two basic types: elastic collision and inelastic collision. Four types of inelastic processes have been considered, namely vibrational excitation, dissociation, electron excitation and ionization. For e-CH4 collision, elastic momentum transfer, vibrational excitation, dissociation, ionization and dissociation ionization are considered. The relationship between the ratio of atomic hydrogen emission line intensity and mean temperature of electron under different CH4 concentration in the gas mixture is investigated. A method of determining the mean temperature of electron in situ in the process of diamond film deposited by EACVD is given. The result is of great importance to depositing high quality diamond films by controlling the conditions of technology efficiently.