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[脉冲激光退火纳米碳化硅的光致发光]

[Photoluminescence of nano-SiC annealed by pulse laser].

作者信息

Yu Wei, He Jie, Sun Yun-tao, Han Li, Fu Guang-sheng

机构信息

College of Physics Science and Technology, Hebei University, Baoding 071002, China.

出版信息

Guang Pu Xue Yu Guang Pu Fen Xi. 2005 Apr;25(4):506-8.

Abstract

Nanocrystalline silicon carbon (nc-SiC) from amorphous silicon carbon films was obtained through XeCl excimer laser annealing. The photoluminescence (PL) of the nc-SiC was analyzed at different annealing laser energy density. It was observed that PL presented a wide luminescence band from 300-600 nm in the nc-SiC films. The two main luminescence bands, situated at 398 and 470 nm respectively, are attributed to band to band and defect recombination in the 6H-SiC based on the structure changes of the nc-SiC films. The relative PL intensity of these two bands was determined by the surface state density in the nc-SiC films and their irradiative life

摘要

通过XeCl准分子激光退火从非晶硅碳膜中获得了纳米晶硅碳(nc-SiC)。在不同的退火激光能量密度下对nc-SiC的光致发光(PL)进行了分析。观察到nc-SiC薄膜中的PL在300 - 600 nm范围内呈现出一个宽发光带。基于nc-SiC薄膜的结构变化,分别位于398和470 nm处的两个主要发光带归因于6H-SiC中的带间和缺陷复合。这两个带的相对PL强度由nc-SiC薄膜中的表面态密度及其辐射寿命决定。

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