Ou Yiyu, Jokubavicius Valdas, Hens Philip, Kaiser Michl, Wellmann Peter, Yakimova Rositza, Syväjärvi Mikael, Ou Haiyan
Department of Photonics Engineering, Technical University of Denmark, Lyngby DK-2800, Denmark.
Opt Express. 2012 Mar 26;20(7):7575-9. doi: 10.1364/OE.20.007575.
In the present work, antireflective sub-wavelength structures have been fabricated on fluorescent 6H-SiC to enhance the white light extraction efficiency by using the reactive-ion etching method. Broadband and omnidirectional antireflection characteristics show that 6H-SiC with antireflective sub-wavelength structures suppress the average surface reflection significantly from 20.5 % to 1.01 % over a wide spectral range of 390-784 nm. The luminescence intensity of the fluorescent 6H-SiC could be enhanced in the whole emission angle range. It maintains an enhancement larger than 91 % up to the incident angle of 70 degrees, while the largest enhancement of 115.4 % could be obtained at 16 degrees. The antireflective sub-wavelength structures on fluorescent 6H-SiC could also preserve the luminescence spectral profile at a large emission angle by eliminating the Fabry-Pérot microcavity interference effect.
在本工作中,通过反应离子刻蚀法在荧光6H-SiC上制备了减反射亚波长结构,以提高白光提取效率。宽带和全向减反射特性表明,具有减反射亚波长结构的6H-SiC在390 - 784 nm的宽光谱范围内将平均表面反射率从20.5%显著降低至1.01%。荧光6H-SiC的发光强度在整个发射角范围内都能得到增强。在入射角为70度时,其增强幅度仍大于91%,而在16度时可获得最大增强幅度115.4%。荧光6H-SiC上的减反射亚波长结构还可通过消除法布里 - 珀罗微腔干涉效应,在大发射角下保持发光光谱轮廓。