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荧光碳化硅的宽带全向光捕获增强

Broadband and omnidirectional light harvesting enhancement of fluorescent SiC.

作者信息

Ou Yiyu, Jokubavicius Valdas, Hens Philip, Kaiser Michl, Wellmann Peter, Yakimova Rositza, Syväjärvi Mikael, Ou Haiyan

机构信息

Department of Photonics Engineering, Technical University of Denmark, Lyngby DK-2800, Denmark.

出版信息

Opt Express. 2012 Mar 26;20(7):7575-9. doi: 10.1364/OE.20.007575.

Abstract

In the present work, antireflective sub-wavelength structures have been fabricated on fluorescent 6H-SiC to enhance the white light extraction efficiency by using the reactive-ion etching method. Broadband and omnidirectional antireflection characteristics show that 6H-SiC with antireflective sub-wavelength structures suppress the average surface reflection significantly from 20.5 % to 1.01 % over a wide spectral range of 390-784 nm. The luminescence intensity of the fluorescent 6H-SiC could be enhanced in the whole emission angle range. It maintains an enhancement larger than 91 % up to the incident angle of 70 degrees, while the largest enhancement of 115.4 % could be obtained at 16 degrees. The antireflective sub-wavelength structures on fluorescent 6H-SiC could also preserve the luminescence spectral profile at a large emission angle by eliminating the Fabry-Pérot microcavity interference effect.

摘要

在本工作中,通过反应离子刻蚀法在荧光6H-SiC上制备了减反射亚波长结构,以提高白光提取效率。宽带和全向减反射特性表明,具有减反射亚波长结构的6H-SiC在390 - 784 nm的宽光谱范围内将平均表面反射率从20.5%显著降低至1.01%。荧光6H-SiC的发光强度在整个发射角范围内都能得到增强。在入射角为70度时,其增强幅度仍大于91%,而在16度时可获得最大增强幅度115.4%。荧光6H-SiC上的减反射亚波长结构还可通过消除法布里 - 珀罗微腔干涉效应,在大发射角下保持发光光谱轮廓。

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