Ravelosona D, Lacour D, Katine J A, Terris B D, Chappert C
Hitachi Global Storage Technologies, San Jose Research Center, 650 Harry Road, San Jose, California 95120 USA.
Phys Rev Lett. 2005 Sep 9;95(11):117203. doi: 10.1103/PhysRevLett.95.117203. Epub 2005 Sep 8.
Nanometer scale observation of the depinning of a narrow domain wall (DW) under a spin current is reported. We studied approximately 12 nm wide 1D Bloch DWs created in thin films exhibiting perpendicular magnetic anisotropy. Magnetotransport measurements reveal thermally assisted current-driven DW motion between pinning sites separated by as little as 20 nm. The efficiency of current-driven DW motion assisted by thermal fluctuations is measured to be orders of magnitude higher than has been found for in-plane magnetized films, allowing us to control DW motion on a nanometer scale at low current densities.
报道了在自旋电流作用下对窄畴壁（DW）脱钉的纳米尺度观察。我们研究了在表现出垂直磁各向异性的薄膜中产生的宽度约为12纳米的一维布洛赫畴壁。磁输运测量揭示了热辅助电流驱动的畴壁在间距小至20纳米的钉扎位点之间的运动。测量发现，由热涨落辅助的电流驱动畴壁运动效率比面内磁化薄膜的情况高出几个数量级，这使我们能够在低电流密度下在纳米尺度上控制畴壁运动。
