Rossnagel K, Rotenberg Eli, Koh H, Smith N V, Kipp L
Institut für Experimentelle und Angewandte Physik, Universität Kiel, D-24098 Kiel, Germany.
Phys Rev Lett. 2005 Sep 16;95(12):126403. doi: 10.1103/PhysRevLett.95.126403.
Angle-resolved photoemission spectroscopy shows that a Mott-Hubbard type metal-insulator transition occurs at the Rb adsorbed surface of the layered charge-density-wave compound 1T-TaS2. The transition is driven by adsorption induced modifications of the charge-density wave and of the interlayer coupling, leading to an increase of the on-site Coulomb correlation energy and a narrowing of the Ta 5d band perpendicular to the layers, respectively. The continuous rearrangement of spectral weight is measured live during the deposition process.
角分辨光电子能谱表明，在层状电荷密度波化合物1T-TaS₂的Rb吸附表面发生了莫特-哈伯德型金属-绝缘体转变。这种转变是由吸附引起的电荷密度波和层间耦合的变化驱动的，分别导致在位库仑关联能增加和垂直于层的Ta 5d能带变窄。在沉积过程中实时测量了光谱权重的连续重排。
