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碳纳米管中激子的辐射寿命。

Radiative lifetime of excitons in carbon nanotubes.

作者信息

Perebeinos Vasili, Tersoff J, Avouris Phaedon

机构信息

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.

出版信息

Nano Lett. 2005 Dec;5(12):2495-9. doi: 10.1021/nl051828s.

Abstract

We calculate the radiative lifetime and energy bandstructure of excitons in semiconducting carbon nanotubes within a tight-binding approach including the electron-hole correlations via the Bethe-Salpeter equation. In the limit of rapid interband thermalization, the radiative decay rate is maximized at intermediate temperatures and decreases at low temperature because the lowest-energy excitons are optically forbidden. The intrinsic phonons cannot scatter excitons between optically active and forbidden bands, so sample-dependent extrinsic effects that break the symmetries can play a central role. We calculate the diameter-dependent energy splittings between singlet and triplet excitons of different symmetries and the resulting dependence of radiative lifetime on temperature and tube diameter.

摘要

我们采用紧束缚方法,通过贝塞耳-萨尔皮特方程考虑电子-空穴相关性,计算了半导体碳纳米管中激子的辐射寿命和能带结构。在带间快速热化的极限情况下,辐射衰减率在中间温度下达到最大值,而在低温下降低,这是因为最低能量的激子在光学上是禁戒的。本征声子无法在光学活性带和禁戒带之间散射激子,因此破坏对称性的与样品相关的非本征效应可能起核心作用。我们计算了不同对称性的单重态和三重态激子之间与直径相关的能量分裂,以及由此产生的辐射寿命对温度和管径的依赖性。

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