Oestreich M, Römer M, Haug R J, Hägele D
Institut für Festkörperphysik, Universität Hannover, Appelstrasse 2, D-30167 Hannover, Germany.
Phys Rev Lett. 2005 Nov 18;95(21):216603. doi: 10.1103/PhysRevLett.95.216603. Epub 2005 Nov 17.
We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
我们通过法拉第旋转噪声光谱法观测了体相砷化镓中电子自旋的噪声谱。该实验技术能够对半导体中的电子自旋动力学进行无干扰测量。我们示例性地测量了低温下n型掺杂砷化镓中的电子自旋弛豫时间和电子朗德g因子，并发现测量得到的噪声谱与基于泊松分布概率的理论吻合良好。
