Szunerits Sabine, Boukherroub Rabah
Laboratoire d'Electrochimie et de Physicochimie des Matériaux et des Interfaces, CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d'Hères Cedex, France.
Langmuir. 2006 Feb 14;22(4):1660-3. doi: 10.1021/la052773c.
We report here on the fabrication and characterization of stable thin films of amorphous silica (SiO(x)) deposited on glass slides coated with a 5 nm adhesion layer of titanium and 50 nm of gold, using the plasma-enhanced chemical vapor deposition (PECVD) technique. The resulting surfaces were characterized using atomic force microscopy (AFM), ellipsometry, contact angle measurements, and surface plasmon resonance (SPR). AFM analysis indicates that homogeneous films of silica with low roughness were formed on the gold surface. The deposited silica films showed excellent stability in different solvents and in piranha solution. There was no significant variation in the thickness or in the SPR signal after these harsh treatments. The Au/SiO(x) interfaces were investigated for their potential applications as new surface plasmon resonance sensor chips. Silica films with thicknesses up to 40 nm allowed visualization of the surface plasmon effect, while thicker films resulted in the loss of the SPR characteristics. SPR allowed further the determination of the silica thickness and was compared to ellipsometric results. Chemical treatment of the SiO(x) film with piranha solution led to the generation of silanol surface groups that have been coupled with a trichlorosilane.
我们在此报告使用等离子体增强化学气相沉积(PECVD)技术,在涂有5纳米钛粘附层和50纳米金的载玻片上制备和表征非晶硅(SiO(x))稳定薄膜的情况。使用原子力显微镜(AFM)、椭偏仪、接触角测量和表面等离子体共振(SPR)对所得表面进行表征。AFM分析表明,在金表面形成了低粗糙度的均匀二氧化硅薄膜。沉积的二氧化硅薄膜在不同溶剂和王水溶液中表现出优异的稳定性。经过这些苛刻处理后,厚度或SPR信号没有明显变化。研究了Au/SiO(x)界面作为新型表面等离子体共振传感器芯片的潜在应用。厚度达40纳米的二氧化硅薄膜能够观察到表面等离子体效应,而较厚的薄膜则导致SPR特性丧失。SPR还可用于确定二氧化硅的厚度,并与椭偏测量结果进行比较。用王水溶液对SiO(x)薄膜进行化学处理会产生已与三氯硅烷偶联的硅醇表面基团。