Certon Dominique, Teston Franck, Patat Frédéric
LUSSI FRE CNRS 2448/ GIP Ultrasons, 37032 Tours, France.
IEEE Trans Ultrason Ferroelectr Freq Control. 2005 Dec;52(12):2199-210. doi: 10.1109/tuffc.2005.1563263.
A finite difference method was implemented to simulate capacitive micromachined ultrasonic transducers (cMUTs) and compared to models described in the literature such as finite element methods. Similar results were obtained. It was found that one master curve described the clamped capacitance. We introduced normalized capacitance versus normalized bias voltage and metallization rate, independent of layer thickness, gap height, and size membrane, leading to the determination of a coupling factor master curve. We present here calculations and measurements of electrical impedance for cMUTs. An electromechanical equivalent circuit was used to perform simulations. Our experimental measurements confirmed the theoretical results in terms of resonance, anti-resonance frequencies, clamped capacitance, and electromechanical coupling factor. Due to inhomogeneity of the tested element array and strong parasitic capacitance between cells, the maximum coupling coefficient value achieved was 0.27. Good agreement with theory was obtained for all findings.
采用有限差分法对电容式微机械超声换能器(cMUT)进行模拟,并与文献中描述的有限元法等模型进行比较。得到了相似的结果。发现一条主曲线描述了夹持电容。我们引入了归一化电容与归一化偏置电压和金属化率的关系,该关系与层厚度、间隙高度和膜尺寸无关,从而确定了耦合因子主曲线。我们在此展示了cMUT的电阻抗计算和测量结果。使用机电等效电路进行模拟。我们的实验测量在共振、反共振频率、夹持电容和机电耦合因子方面证实了理论结果。由于测试元件阵列的不均匀性以及单元之间的强寄生电容,实现的最大耦合系数值为0.27。所有结果均与理论取得了良好的一致性。