半导体纳米线的三维纳米级成分映射

Three-dimensional nanoscale composition mapping of semiconductor nanowires.

作者信息

Perea Daniel E, Allen Jonathan E, May Steven J, Wessels Bruce W, Seidman David N, Lauhon Lincoln J

机构信息

Department of Materials Science and Engineering, Department of Electrical Engineering and Computer Science, and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA.

出版信息

Nano Lett. 2006 Feb;6(2):181-5. doi: 10.1021/nl051602p.

DOI:10.1021/nl051602p

PMID:16464031

Abstract

We demonstrate the three-dimensional composition mapping of a semiconductor nanowire with single-atom sensitivity and subnanometer spatial resolution using atom probe tomography. A new class of atom probe, the local electrode atom probe (LEAP) microscope, was used to map the position of single Au atoms in an InAs nanowire and to image the interface between a Au catalyst and InAs in three dimensions with 0.3-nm resolution. These results establish atom probe tomography as a uniquely powerful tool for analyzing the chemical composition of semiconductor nanostructures.

摘要

我们使用原子探针断层扫描技术展示了具有单原子灵敏度和亚纳米空间分辨率的半导体纳米线的三维成分映射。一种新型原子探针——局部电极原子探针（LEAP）显微镜，被用于绘制铟砷纳米线中单个金原子的位置，并以0.3纳米的分辨率对金催化剂与铟砷之间的界面进行三维成像。这些结果表明，原子探针断层扫描是分析半导体纳米结构化学成分的一种独特而强大的工具。