由局部栅电极定义的InAs纳米线中的可调谐双量子点。
Tunable double quantum dots in InAs nanowires defined by local gate electrodes.
作者信息
Fasth Carina, Fuhrer Andreas, Björk Mikael T, Samuelson Lars
机构信息
Solid State Physics/the Nanometer Structure Consortium, Lund University, Box 118, S-221 00, Lund, Sweden.
出版信息
Nano Lett. 2005 Jul;5(7):1487-90. doi: 10.1021/nl050850i.
PMID:16178262
Abstract
We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.
摘要
我们报道了利用局部栅极静电耗尽通过化学束外延生长的InAs纳米线来定义的单量子点和双量子点的低温输运测量。这种技术使我们能够沿着半导体纳米线定义多个量子点，并调节它们之间的耦合。
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