Liu Lei Vincent, Tian Wei Quan, Wang Yan Alexander
Department of Chemistry, University of British Columbia, Vancouver, British Columbia V6T 1Z1, Canada.
J Phys Chem B. 2006 Feb 9;110(5):1999-2005. doi: 10.1021/jp053931b.
In this work, we applied a two-layered ONIOM (B3LYP/6-31G(d):UFF) method to study the reaction of nitric oxides with a 5-1DB defect on the sidewall of the single-walled carbon nanotube (SWCNT). We have chosen a suitable ONIOM model for the calculation of the SWCNT based on the analyses of the frontier molecular orbitals, local density of states, and natural bond orbitals. Our calculations clearly indicate that the 5-1DB defect is the chemically active center of the SWCNT. In the reaction of nitric oxides with the defected SWCNT, the 5-1DB defect site can capture a nitrogen atom from nitric oxides, yielding the N-substitutionally doped SWCNT. We have explored the reaction pathway in detail. Our work verifies the chemical reactivity of the 5-1DB defects of the SWCNTs, indicates that the 5-1DB defect is a possible site for the functionalization of the SWCNTs, and demonstrates a possible way to fabricate position controllable substitutionally doped SWCNTs with a low doping concentration under mild conditions via some simple chemical reactions.
在本工作中,我们应用双层ONIOM(B3LYP/6-31G(d):UFF)方法研究了一氧化氮与单壁碳纳米管(SWCNT)侧壁上的5-1DB缺陷的反应。基于对前线分子轨道、局域态密度和自然键轨道的分析,我们选择了合适的ONIOM模型来计算SWCNT。我们的计算清楚地表明,5-1DB缺陷是SWCNT的化学活性中心。在一氧化氮与有缺陷的SWCNT的反应中,5-1DB缺陷位点可以从一氧化氮中捕获一个氮原子,生成N-取代掺杂的SWCNT。我们详细探索了反应途径。我们的工作验证了SWCNT的5-1DB缺陷的化学反应性,表明5-1DB缺陷是SWCNT功能化的一个可能位点,并展示了一种通过一些简单化学反应在温和条件下制备低掺杂浓度的位置可控取代掺杂SWCNT的可能方法。