Yamada-Takamura Yukiko, Wang Z T, Fujikawa Y, Sakurai T, Xue Q K, Tolle J, Liu P-L, Chizmeshya A V G, Kouvetakis J, Tsong I S T
Institute for Materials Research, Tohoku University, Sendai, Japan.
Phys Rev Lett. 2005 Dec 31;95(26):266105. doi: 10.1103/PhysRevLett.95.266105. Epub 2005 Dec 28.
Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB(2)(0001) clarify the origin of the N polarity.
通过等离子体辅助分子束外延在晶格匹配的ZrB₂缓冲层上在Si(111)上外延生长的氮化镓薄膜，已通过非接触原子力显微镜进行了原位研究，并通过反射高能电子衍射进行了实时研究。确定生长的薄膜始终为N极性。对GaN(0001)和ZrB₂(0001)之间的界面结构进行建模的第一性原理理论计算阐明了N极性的起源。
