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通过与衬底杂交对超薄膜表面态进行修饰:Ag在Ge上的研究

Modification of surface states in ultrathin films via hybridization with the substrate: a study of Ag on Ge.

作者信息

Tang S-J, Miller T, Chiang T-C

机构信息

Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080, USA.

出版信息

Phys Rev Lett. 2006 Jan 27;96(3):036802. doi: 10.1103/PhysRevLett.96.036802. Epub 2006 Jan 24.

Abstract

The Shockley surface state of Ag(111) develops unusual band dispersion relations for Ag films of decreasing thicknesses on Ge(111), as observed by angle-resolved photoemission. Its parabolic dispersion in the thick-film limit shifts toward higher binding energies and splits into multiple bands with dispersions that reflect the valence band structure of Ge including the heavy-hole, light-hole, and split-off bands. The results are explained in terms of a hybridization interaction between the Ag surface state and the Ge substrate states.

摘要

通过角分辨光电子能谱观察到,在Ge(111)上厚度逐渐减小的Ag薄膜中,Ag(111)的肖克利表面态呈现出异常的能带色散关系。在厚膜极限下其抛物线形色散向更高结合能移动,并分裂为多个能带,这些能带的色散反映了Ge的价带结构,包括重空穴带、轻空穴带和分裂带。这些结果可以用Ag表面态与Ge衬底态之间的杂化相互作用来解释。

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