Baron Alfred Q R, Kishimoto Shunji, Morse John, Rigal Jean Marie
SPring-8/JASRI, Hyogo, Japan.
J Synchrotron Radiat. 2006 Mar;13(Pt 2):131-42. doi: 10.1107/S090904950503431X. Epub 2006 Feb 17.
Silicon avalanche photodiodes (APDs) are discussed as fast X-ray detectors for synchrotron radiation. The emphasis is on ;direct' detection, where the X-ray is absorbed within the silicon APD itself, and, therefore, on use with medium-energy X-rays, <30 keV. The impact of APD structure on device performance is examined, and representative data from many different commercial devices are presented. Specific areas discussed include signal shapes, high-rate behavior, time resolution and pulse-height response. Data from several APD arrays are also presented, as is a detailed description of an integrated package system. Tables are included comparing commercially available devices, including arrays.
硅雪崩光电二极管(APD)被作为用于同步辐射的快速X射线探测器进行讨论。重点在于“直接”探测,即X射线在硅APD自身内部被吸收,因此适用于能量低于30 keV的中能X射线。研究了APD结构对器件性能的影响,并给出了来自许多不同商业器件的代表性数据。讨论的具体方面包括信号形状、高速率行为、时间分辨率和脉冲高度响应。还给出了几个APD阵列的数据,以及对一个集成封装系统的详细描述。文中包含了比较市售器件(包括阵列)的表格。