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用于极紫外太阳成像的碳化硅/铽和硅/铽多层涂层。

SiC/Tb and Si/Tb multilayer coatings for extreme ultraviolet solar imaging.

作者信息

Kjornrattanawanich Benjawan, Windt David L, Seely John F, Uspenskii Yurii A

机构信息

Universities Space Research Association, National Synchrotron Light Source, Beamline X24C, Brookhaven National Laboratory, Upton, New York 11973, USA.

出版信息

Appl Opt. 2006 Mar 10;45(8):1765-72. doi: 10.1364/ao.45.001765.

Abstract

Narrowband SiC/Tb and Si/Tb multilayers are fabricated with as much as a 23% normal-incidence reflectance near a 60 nm wavelength and spectral bandpass (FWHM) values of 9.4 and 6.5 nm, respectively. The structural properties of the films are investigated using extreme ultraviolet and x-ray reflectometry and transmission electron microscopy. Thermal stability is investigated in films annealed to as high as 300 degrees C. Because of their superior thermal stability, relatively high reflectance, and narrower spectral bandpass, Si/Tb multilayers are identified as optimal candidates for solar physics imaging applications, where the peak response can be tuned to important emission lines such as O v near 63.0 nm and Mg x near 61.0 nm. We describe our experimental procedures and results, discuss the implications of our findings, and outline prospects for improved performance.

摘要

制备了窄带SiC/Tb和Si/Tb多层膜,在60nm波长附近的垂直入射反射率高达23%,光谱带通(半高宽)值分别为9.4nm和6.5nm。使用极紫外和X射线反射测量法以及透射电子显微镜研究了薄膜的结构特性。对退火至高达300摄氏度的薄膜进行了热稳定性研究。由于其优异的热稳定性、相对较高的反射率和较窄的光谱带通,Si/Tb多层膜被确定为太阳物理成像应用的最佳候选材料,其中峰值响应可调整到重要的发射线,如63.0nm附近的O v和61.0nm附近的Mg x。我们描述了实验过程和结果,讨论了研究结果的意义,并概述了性能改进的前景。

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