Department of Chemistry, Stanford University, Stanford, California 94305.
Proc Natl Acad Sci U S A. 1983 Feb;80(4):1152-6. doi: 10.1073/pnas.80.4.1152.
n-Type Si electrodes in MeOH solvent with 0.2 M (1-hydroxyethyl)ferrocene, 0.5 mM (1-hydroxyethyl)ferricenium, and 1.0 M LiClO(4) exhibit air mass 2 conversion efficiencies of 10.1% for optical energy into electricity. We observe open-circuit voltages of 0.53 V and short-circuit quantum efficiencies for electron flow of nearly unity. The fill factor of the cell does not decline significantly with increases in light intensity, indicating substantial reduction in efficiency losses in MeOH solvent compared to previous nonaqueous n-Si systems. Matte etch texturing of the Si surface decreases surface reflectivity and increases photocurrent by 50% compared to shiny, polished Si samples. The high values of the open-circuit voltage observed are consistent with the presence of a thin oxide layer, as in a Schottky metal-insulator-semiconductor device, which yields decreased surface recombination and increased values of open-circuit voltage and short-circuit current. The n-Si system was shown to provide sustained photocurrent at air mass 2 levels (20 mA/cm(2)) for charge through the interface of >2,000 C/cm(2). The n-Si/MeOH system represents a liquid junction cell that has exceeded the 10% barrier for conversion of optical energy into electricity.
在 MeOH 溶剂中，n 型 Si 电极采用 0.2 M（1-羟乙基）二茂铁、0.5 mM（1-羟乙基）铁和 1.0 M LiClO4，其光电能量转换效率为 10.1%。我们观察到开路电压为 0.53 V，电子流动的短路量子效率接近 1。随着光强度的增加，电池的填充因子并没有显著下降，这表明与以前的非水 n-Si 系统相比，在 MeOH 溶剂中效率损失大大减少。与光滑、抛光的 Si 样品相比，Si 表面的哑光蚀刻纹理降低了表面反射率，并使光电流增加了 50%。观察到的开路电压值较高，与肖特基金属-绝缘体-半导体器件中存在薄氧化层一致，这降低了表面复合，并增加了开路电压和短路电流的值。n-Si 系统在空气质量 2 水平（20 mA/cm2）下通过界面提供持续的光电流（>2000 C/cm2）。n-Si/MeOH 系统代表一种液体结电池，已经超过了将光能量转换为电能的 10%的障碍。
