Hong Jung-Il, Leo Titus, Smith David J, Berkowitz Ami E
Center for Magnetic Recording Research, University of California-San Diego, La Jolla, California 92093, USA.
Phys Rev Lett. 2006 Mar 24;96(11):117204. doi: 10.1103/PhysRevLett.96.117204. Epub 2006 Mar 21.
The exchange bias H(E) of coupled polycrystalline films of antiferromagnetic CoO and ferromagnetic Co was significantly enhanced by the systematic substitution of nonmagnetic Mg for Co in CoO. Samples in which either Co or Co(1-x)Mg(x)O were deposited first were investigated at temperatures from 10 to 300 K. With Co(1-x)Mg(x)O on the bottom, the increased interfacial uncompensated spin density of the single antiferromagnetic domain Co(1x)Mg(x)O crystallites produced the enhanced H(E). With Co on the bottom, a thin interfacial oxide layer was primarily responsible for the strongly increased H(E).
通过在反铁磁CoO中用非磁性Mg系统地替代Co,反铁磁CoO和铁磁Co的耦合多晶薄膜的交换偏置H(E)得到了显著增强。在10至300 K的温度下研究了先沉积Co或Co(1-x)Mg(x)O的样品。当Co(1-x)Mg(x)O在底部时,单个反铁磁畴Co(1x)Mg(x)O微晶增加的界面未补偿自旋密度产生了增强的H(E)。当Co在底部时,一个薄的界面氧化层是H(E)大幅增加的主要原因。