铁磁体（Ga，Mn）As中的畴壁电阻
Domain-wall resistance in ferromagnetic (Ga,Mn)As.
作者信息
Chiba D, Yamanouchi M, Matsukura F, Dietl T, Ohno H
机构信息
ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency, 1-18 Kitamemachi, Aoba-ku Sendai, 980-0023, Japan.
出版信息
Phys Rev Lett. 2006 Mar 10;96(9):096602. doi: 10.1103/PhysRevLett.96.096602. Epub 2006 Mar 6.
A series of microstructures designed to pin domain walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is 1 order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced mistracking of the carrier spins subject to spatially varying magnetization.
一系列旨在钉扎具有垂直磁各向异性的（镓，锰）砷中的畴壁（DWs）的微观结构已被用于确定对DW电阻的外在和内在贡献。前者被定量解释为DW处霍尔电场极性变化的结果。后者比由各向异性磁阻引起的项大1个数量级，并且被证明与受空间变化磁化影响的载流子自旋的无序诱导误跟踪一致。
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