II-VI/III-V异质结构的Ga(1-x)Mn(x)As/ZnSe/Ga(1-x)Mn(x)As磁性隧道结中隧道各向异性磁电阻的起源
Origin of the tunnel anisotropic magnetoresistance in Ga(1-x)Mn(x)As/ZnSe/Ga(1-x)Mn(x)As magnetic tunnel junctions of II-VI/III-V heterostructures.
作者信息
Saito H, Yuasa S, Ando K
机构信息
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan.
出版信息
Phys Rev Lett. 2005 Aug 19;95(8):086604. doi: 10.1103/PhysRevLett.95.086604. Epub 2005 Aug 17.
We investigated spin-dependent transport in magnetic tunnel junctions made of III-V Ga(1-x)Mn(x)As electrodes and II-VI ZnSe tunnel barriers. The high tunnel magnetoresistance (TMR) ratio up to 100% we observed indicates high spin polarization at the barrier/electrodes interfaces. We found anisotropic tunneling conductance having a magnitude of 10% with respect to the direction of magnetization to linearly depend on the magnetic anisotropy energy of Ga(1-x)Mn(x)As. This proves that the spin-orbit interactions in the valence band of Ga(1-x)M(x)As are responsible for the tunnel anisotropic magnetoresistance (TAMR) effect.
我们研究了由III-V族Ga(1-x)Mn(x)As电极和II-VI族ZnSe隧道势垒构成的磁性隧道结中的自旋相关输运。我们观察到高达100%的高隧道磁电阻（TMR）比率，这表明在势垒/电极界面处具有高自旋极化。我们发现，相对于磁化方向，具有10%量级的各向异性隧穿电导线性依赖于Ga(1-x)Mn(x)As的磁各向异性能量。这证明Ga(1-x)M(x)As价带中的自旋-轨道相互作用是隧道各向异性磁电阻（TAMR）效应的原因。
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