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金属氮化物的薄膜生长前驱体开发。含双(亚胺基)金属片段和各种氮供体配体的钼(VI)和钨(VI)配合物的合成、结构及挥发性

Film growth precursor development for metal nitrides. Synthesis, structure, and volatility of molybdenum(VI) and tungsten(VI) complexes containing bis(imido)metal fragments and various nitrogen donor ligands.

作者信息

El-Kadri Oussama M, Heeg Mary Jane, Winter Charles H

机构信息

Department of Chemistry, Wayne State University, 5101 Cass Avenue, Detroit, Michigan 48202, USA.

出版信息

Dalton Trans. 2006 Apr 28(16):1943-53. doi: 10.1039/b515378f. Epub 2006 Jan 12.

DOI:10.1039/b515378f
PMID:16609764
Abstract

The molybdenum and tungsten complexes W2(NtBu)4(pz)4(pzH).(C6H14)0.5 (pz = pyrazolate), M(NtBu)2(Me2pz)2(Me2pzH)2 (Me2pz = 3,5-dimethylpyrazolate), M(NtBu)2(tBu2pz)2 (tBu2pz = 3,5-di-tert-butylpyrazolate), M2(NtBu)4(Me2pz)2Cl2, W(NtBu)2(C2N3(iPr)2)2py2, M(NtBu)2-(CN4CF3)2py2, and W(NtBu)2(PhNNNPh)2 were prepared by various synthetic routes from the starting materials Mo(NtBu)2Cl2, W(NtBu)2(NHtBu)2, and W(NtBu)2Cl2py2. These new complexes were characterized by spectral and analytical methods and by X-ray crystal structure determinations. The volatilities and thermal stabilities were evaluated to determine the potential of the new complexes for use in thin film growth of metal nitride films. Mo(NtBu)2(tBu2pz)2 and W(NtBu)2(tBu2pz)2 were found to have the optimum combination of volatility and thermal stability for application in atomic layer deposition thin film growth procedures.

摘要

通过多种合成路线,由起始原料Mo(NtBu)₂Cl₂、W(NtBu)₂(NHtBu)₂和W(NtBu)₂Cl₂py₂制备了钼和钨配合物W₂(NtBu)₄(pz)₄(pzH)·(C₆H₁₄)₀.₅(pz = 吡唑酸根)、M(NtBu)₂(Me₂pz)₂(Me₂pzH)₂(Me₂pz = 3,5 - 二甲基吡唑酸根)、M(NtBu)₂(tBu₂pz)₂(tBu₂pz = 3,5 - 二叔丁基吡唑酸根)、M₂(NtBu)₄(Me₂pz)₂Cl₂、W(NtBu)₂(C₂N₃(iPr)₂)₂py₂、M(NtBu)₂(CN₄CF₃)₂py₂和W(NtBu)₂(PhNNNPh)₂。这些新配合物通过光谱和分析方法以及X射线晶体结构测定进行了表征。评估了它们的挥发性和热稳定性,以确定这些新配合物在金属氮化物薄膜的薄膜生长中应用的潜力。发现Mo(NtBu)₂(tBu₂pz)₂和W(NtBu)₂(tBu₂pz)₂在挥发性和热稳定性方面具有最佳组合,适用于原子层沉积薄膜生长工艺。

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