Combined quantum chemical density functional theory and spectroscopic Raman and UV-vis-NIR study of oligothienoacenes with five and seven rings.

In this article, we report the characterization of novel oligothienoacenes with five and seven fused thiophene rings, materials with potential applications in organic electronics. In contrast to usual alpha-linked oligothiophenes, these fused oligothiophenes have a larger band gap than most semiconductors currently used in the fabrication of organic field-effect transistors (OFETs) and therefore they are expected to be more stable in air. The synthesis of these fused-ring oligomers was motivated by the notion that a more rigid and planar structure should reduce defects (such as torsion about single bonds between alpha-linked units or S-syn defects) and thus improve conjugation for better charge-carrier mobility. The conjugational properties of these two molecular materials have been investigated by means of FT-Raman spectroscopy, revealing that conjugation still increases in passing from the five-ring oligomer to that with seven-rings. DFT and TDDFT quantum chemical calculations have been performed, at the B3LYP/6-31G level, to assess information regarding the minimum-energy molecular structure, topologies, and absolute energies of the frontier molecular orbitals (MOs.) around the gap, vibrational normal modes related to the main Raman features, and vertical one-electron excitations giving rise to the main optical absorptions.