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不同衬底温度下离子束辅助TiO₂薄膜光学性质和残余应力的热退火研究

Investigation of thermal annealing of optical properties and residual stress of ion-beam-assisted TiO2 thin films with different substrate temperatures.

作者信息

Lee Cheng-Chung, Chen Hsi-Chao, Jaing Cheng-Chung

机构信息

Thin Film Technology Center, Institute of Optical Science, National Central University, Chung-Li, Taiwan.

出版信息

Appl Opt. 2006 May 1;45(13):3091-6. doi: 10.1364/ao.45.003091.

DOI:10.1364/ao.45.003091
PMID:16639458
Abstract

Titanium oxide films were prepared by ion-beam-assisted deposition on glass substrates at various substrate temperatures. The effect of the temperature of thermal annealing from 100 degrees C to 300 degrees C on the optical properties and residual stress was investigated. The influence on the stoichiometry and residual stress of titanium oxides deposited at different substrate temperature was discussed. The residual-stress was minimum and the extinction coefficient was maximum at an annealing temperature of 200 degrees C with a substrate temperature of 150 degrees C. However, when the substrate temperature was increased to 200 degrees C and 250 degrees C, the residual stress was minimum and the extinction coefficient was maximum at an annealing temperature of 250 degrees C. The spectra of x-ray photoelectron spectroscopy reveal that the films lost oxygen and slowly generated lower suboxides at the annealing temperature at which the residual stress was minimum and the extinction coefficient was maximum. As the annealing temperature increased above the temperature at minimum stress, the lower suboxides began to capture oxygen and form stable oxides. TiO2 films deposited at substrate temperatures of 200 degrees C and 250 degrees C were more stable than films deposited at 150 degrees C.

摘要

通过离子束辅助沉积在不同衬底温度的玻璃衬底上制备了氧化钛薄膜。研究了100℃至300℃的热退火温度对光学性能和残余应力的影响。讨论了不同衬底温度下沉积的氧化钛的化学计量比和残余应力的影响。在衬底温度为150℃、退火温度为200℃时,残余应力最小,消光系数最大。然而,当衬底温度升至200℃和250℃时,在退火温度为250℃时残余应力最小,消光系数最大。X射线光电子能谱表明,在残余应力最小、消光系数最大的退火温度下,薄膜失去氧并缓慢生成低价氧化物。当退火温度高于最小应力温度时,低价氧化物开始捕获氧并形成稳定的氧化物。在200℃和250℃衬底温度下沉积的TiO2薄膜比在150℃下沉积的薄膜更稳定。

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