慢光光子晶体波导中的增强受激拉曼散射

Enhanced stimulated Raman scattering in slow-light photonic crystal waveguides.

作者信息

McMillan James F, Yang Xiaodong, Panoiu Nicolae C, Osgood Richard M, Wong Chee Wei

机构信息

Optical Nanostructures Laboratory, Columbia University, New York, New York 10027, USA.

出版信息

Opt Lett. 2006 May 1;31(9):1235-7. doi: 10.1364/ol.31.001235.

DOI:10.1364/ol.31.001235

PMID:16642070

Abstract

We investigate for the first time, to our knowledge, the enhancement of the stimulated Raman scattering in slow-light silicon-on-insulator (SOI) photonic crystal line defect waveguides. By applying the Bloch-Floquet formalism to the guided modes in a planar photonic crystal, we develop a formalism that relates the intensity of the downshifted Stokes signal to the pump intensity and the modal group velocities. The formalism is then applied to two prospective schemes for enhanced stimulated Raman generation in slow-light photonic crystal waveguides. The results demonstrate a maximum factor of 104(66,000) enhancement with respect to SOI channel waveguides.

摘要

据我们所知，我们首次研究了慢光绝缘体上硅（SOI）光子晶体线缺陷波导中受激拉曼散射的增强情况。通过将布洛赫 - 弗洛凯形式理论应用于平面光子晶体中的导模，我们开发了一种形式理论，该理论将下移斯托克斯信号的强度与泵浦强度和模式群速度联系起来。然后将该形式理论应用于慢光光子晶体波导中增强受激拉曼产生的两种预期方案。结果表明，相对于SOI通道波导，增强因子最大可达104（66,000）。