Nogues C, Cohen S R, Daube S, Apter N, Naaman R
J Phys Chem B. 2006 May 11;110(18):8910-3. doi: 10.1021/jp060870o.
The electrical conduction through three short oligomers (26 base pairs, 8 nm long) with differing numbers of GC base pairs was measured. One strand is poly(A)-poly(T), which is entirely devoid of GC base pairs. Of the two additional strands, one contains 8 and the other 14 GC base pairs. The oligomers were adsorbed on a gold substrate on one side and to a gold nanoparticle on the other side. Conducting atomic force microscope was used for obtaining the current versus voltage curves. We found that in all cases the DNA behaves as a wide band-gap semiconductor, with width depending on the number of GC base pairs. As this number increases, the band-gap narrows. For applied voltages exceeding the band-gap, the current density rises dramatically. The rise becomes sharper with increasing number of GC base pairs, reaching more than 1 nA/nm2 for the oligomer containing 14 GC pairs.
测量了通过三种具有不同GC碱基对数量的短寡聚物(26个碱基对,8纳米长)的导电情况。一条链是聚(A)-聚(T),完全不含GC碱基对。在另外两条链中,一条含有8个GC碱基对,另一条含有14个GC碱基对。这些寡聚物一侧吸附在金基底上,另一侧吸附在金纳米颗粒上。使用导电原子力显微镜获取电流与电压曲线。我们发现,在所有情况下,DNA表现为宽带隙半导体,其宽度取决于GC碱基对的数量。随着这个数量的增加,带隙变窄。对于超过带隙的外加电压,电流密度急剧上升。随着GC碱基对数量的增加,上升变得更加陡峭,对于含有14个GC碱基对的寡聚物,电流密度达到超过1 nA/nm²。