Jeon Seok Min, Jung Soon Jung, Lim Do Kyung, Kim Hyeong-Do, Lee Hangil, Kim Sehun
Department of Chemistry and School of Molecular Science (BK21), Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea.
J Am Chem Soc. 2006 May 17;128(19):6296-7. doi: 10.1021/ja060333h.
The adsorption of thiophene on Ge(100) has been studied using scanning tunneling microscopy (STM), high-resolution core-level photoemission spectroscopy (HRPES), and density functional theory (DFT) calculations. Until now, thiophene is known to react with the Ge(100) dimer through a [4 + 2] cycloaddition reaction at room temperature, similar to the case of thiophene on Si(100). However, we found that thiophene has two adsorption geometries on Ge(100) at room temperature, such as a kinetically favorable Ge-S dative bonding configuration and a thermodynamically stable [4 + 2] cycloaddition adduct. Moreover, our STM results show that under 0.25 ML thiophene molecules preferentially produce one-dimensional molecular chain structures on Ge(100) via the Ge-S dative bonding configuration.
利用扫描隧道显微镜（STM）、高分辨率芯能级光电子能谱（HRPES）和密度泛函理论（DFT）计算，研究了噻吩在Ge(100)上的吸附情况。到目前为止，已知噻吩在室温下通过[4 + 2]环加成反应与Ge(100)二聚体发生反应，这与噻吩在Si(100)上的情况类似。然而，我们发现噻吩在室温下在Ge(100)上有两种吸附几何结构，比如动力学上有利的Ge-S配位键构型和热力学上稳定的[4 + 2]环加成加合物。此外，我们的STM结果表明，在0.25 ML（单层覆盖度）以下，噻吩分子通过Ge-S配位键构型优先在Ge(100)上生成一维分子链结构。
