Fontaine-Gautrelet Céline, Krafft Jean-Marc, Djéga-Mariadassou Gérald, Thomas Cyril
Laboratoire de Réactivité de Surface, UMR CNRS 7609, Université Pierre et Marie Curie, Case 178, Paris, France.
J Phys Chem B. 2006 May 25;110(20):10075-81. doi: 10.1021/jp061077y.
The low-temperature adsorption of N(2) on Rh/SiO(2) samples of various particle-size distributions was followed by FTIR. The addition of O(2) pulses on Rh(0) surfaces saturated with chemisorbed N(2) allowed us to reassign stretching frequencies attributed originally to N(2)-Rh(0) to N(2)-Rh(delta+). The formation of the latter oxidized Rh species is assumed to be induced by an electron withdrawal from adsorbed oxygen species on Rh surface centers neighboring those onto which N(2) species are chemisorbed. The present work, thus, enables us to delimit ranges of frequencies for which the adsorption of N(2) can be considered to occur on either Rh(0) or Rh(delta+) centers for nu(N2) lower or higher than 2243 cm(-1), respectively. The N(2)-FTIR experiments performed on the studied catalysts also suggest a lattice plane selectivity for N(2) adsorption on metallic Rh planes of different natures which, to our knowledge, has not been reported yet for Rh.
通过傅里叶变换红外光谱(FTIR)跟踪了N₂在具有不同粒度分布的Rh/SiO₂样品上的低温吸附情况。在化学吸附有N₂的Rh(0)表面上添加O₂脉冲,使我们能够将最初归因于N₂-Rh(0)的伸缩频率重新归属于N₂-Rh(δ+)。假定后一种氧化态Rh物种的形成是由于从与化学吸附有N₂物种的那些Rh表面中心相邻的Rh表面中心上吸附的氧物种中夺取电子而诱导的。因此,本研究使我们能够分别为ν(N₂)低于或高于2243 cm⁻¹的情况划定N₂吸附可被认为发生在Rh(0)或Rh(δ+)中心上的频率范围。在研究的催化剂上进行的N₂-FTIR实验还表明,N₂在不同性质的金属Rh平面上的吸附具有晶格平面选择性,据我们所知,这在Rh上尚未见报道。