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基于掠角光致发光测量的电致发光共轭聚合物中的各向异性光学性质。

Anisotropic optical properties in electroluminescent conjugated polymers based on grazing angle photoluminescence measurements.

作者信息

Yim Keng-Hoong, Friend Richard, Kim Ji-Seon

机构信息

Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE, United Kingdom.

出版信息

J Chem Phys. 2006 May 14;124(18):184706. doi: 10.1063/1.2198539.

Abstract

Grazing angle photoluminescence (GPL) originates from a waveguided light emitted at grazing angle to the substrate due to the total internal reflections, and the light emission is polarized with enhanced intensity at selective mode wavelength. GPL measurements reveal the optical anisotropy of luminescent conjugated polymers, in particular, the alignment of emitting dipoles from which emission occurs, in contrast to spectroscopic ellipsometry measurements that give the anisotropy in the absorption. Based on the GPL emission intensities and spectra, we investigate the anisotropic optical properties in electroluminescent poly(9,9'-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) conjugated polymer thin films of different molecular weights (M(n) = 9-255 kg/mol), both in the pristine and annealed states. The optical anisotropy in F8BT films generally increases with molecular weight, suggesting that higher molecular weight polymers with longer chains are more likely to lie in-plane to the substrate. Upon annealing, high molecular weight F8BT films show even a higher degree of anisotropy, in contrast to low molecular weight F8BT films that become more isotropic. Annealing causes the polymer chains to rearrange and adopt a configuration in which the interchain exciton migration to better ordered low energy (LE) emissive states is strongly suppressed. We observe that the emissive states in F8BT are strongly affected by the local polymer chain arrangement, producing the less ordered high energy (HE) emissive states near the substrate interface where there is a higher degree of chain disorder and the LE states in the bulk of the film. When spin coated onto a quartz substrate precoated with a poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) layer, films of F8BT show severe luminescence quenching near the PEDOT:PSS interface for both the LE and HE emissive states, but a selective quenching of the LE states in the bulk of the film. These observations have important implications for fabricating efficient electronic devices using conjugated polymers as an active material, since the performance of these devices will strongly depend on anisotropic optical properties of electroluminescent conjugated polymers.

摘要

掠角光致发光(GPL)源于因全内反射而以与衬底成掠角发射的波导光,并且光发射在选择性模式波长处被偏振且强度增强。GPL测量揭示了发光共轭聚合物的光学各向异性,特别是发射偶极子的排列,从该排列发生发射,这与给出吸收各向异性的光谱椭偏测量相反。基于GPL发射强度和光谱,我们研究了不同分子量(M(n)=9 - 255 kg/mol)的电致发光聚(9,9'-二正辛基芴-alt-苯并噻二唑)(F8BT)共轭聚合物薄膜在原始状态和退火状态下的各向异性光学性质。F8BT薄膜中的光学各向异性通常随分子量增加,这表明具有更长链的高分子量聚合物更有可能与衬底平面内排列。退火后,高分子量F8BT薄膜显示出更高程度的各向异性,而低分子量F8BT薄膜变得更加各向同性。退火导致聚合物链重新排列并采用一种构型,其中链间激子迁移到更好有序的低能量(LE)发射态受到强烈抑制。我们观察到F8BT中的发射态受到局部聚合物链排列的强烈影响,在衬底界面附近产生较无序的高能量(HE)发射态,此处链无序程度较高,而在薄膜主体中产生LE态。当旋涂到预先涂有聚(苯乙烯磺酸盐)掺杂的聚(3,4-乙烯二氧噻吩)(PEDOT:PSS)层的石英衬底上时,F8BT薄膜在PEDOT:PSS界面附近对于LE和HE发射态均显示出严重的发光猝灭,但在薄膜主体中LE态有选择性猝灭。这些观察结果对于使用共轭聚合物作为活性材料制造高效电子器件具有重要意义,因为这些器件的性能将强烈依赖于电致发光共轭聚合物的各向异性光学性质。

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