• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

电子与六氟化钼、六氟化铼和六氟化钨的附着;六氟钼阴离子与六氟化铼的反应以及氩离子与六氟化钼的反应。

Electron attachment to MoF6, ReF6, and WF6; reaction of MoF6(-) with ReF6 and reaction of Ar+ with MoF6.

作者信息

Friedman Jeffrey F, Stevens Amy E, Miller Thomas M, Viggiano A A

机构信息

Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico.

出版信息

J Chem Phys. 2006 Jun 14;124(22):224306. doi: 10.1063/1.2202851.

DOI:10.1063/1.2202851
PMID:16784273
Abstract

Rate constants were measured for electron attachment to MoF(6), ReF(6), and WF(6) in 133 Pa of helium gas using a flowing-afterglow Langmuir-probe apparatus. The experiment is a thorny one because the molecules tend to form oxide impurities on feedline surfaces and because of thermal decomposition of MoF(6) on surfaces as the gas temperature is increased. The electron attachment rate constant for MoF(6) is (2.3+/-0.8)x10(-9) cm(3) s(-1) at 297 K; only MoF(6) (-) is formed in the temperature range of 297-385 K. The rate constant increases with temperature up to the point where decomposition becomes apparent. Electron attachment to ReF(6) occurs with a rate constant of (2.4+/-0.8)x10(-9) cm(3) s(-1) at 297 K; only ReF(6) (-) is produced. MoF(6) (-) reacts with ReF(6) to form ReF(6) (-) on essentially every collision, showing definitively that the electron affinity of ReF(6) is greater than that of MoF(6). A rate constant of (5.0+/-1.3)x10(-10) cm(3) s(-1) was measured for this ion-molecule reaction at 304 K. The reverse reaction is not observed. The reaction of Ar(+) with MoF(6) was found to produce MoF(5) (+)+F, with a rate constant of (1.8+/-0.5)x10(-9) cm(3) s(-1). WF(6) attaches electrons so slowly at room temperature that the attachment rate was below detection level (< or =10(-12) cm(3) s(-1)). By 552 K, the attachment rate constant reaches a value of (2+/-1)x10(-10) cm(3) s(-1).

摘要

使用流动余辉朗缪尔探针装置,在133帕的氦气中测量了电子与MoF(6)、ReF(6)和WF(6)的附着速率常数。该实验颇具难度,原因在于这些分子易于在进料管线表面形成氧化物杂质,并且随着气体温度升高,MoF(6)会在表面发生热分解。MoF(6)的电子附着速率常数在297 K时为(2.3±0.8)×10⁻⁹立方厘米·秒⁻¹;在297 - 385 K的温度范围内仅形成MoF(6)⁻。速率常数随温度升高,直至分解明显时达到峰值。电子与ReF(6)的附着速率常数在297 K时为(2.4±0.8)×10⁻⁹立方厘米·秒⁻¹;仅产生ReF(6)⁻。MoF(

相似文献

1
Electron attachment to MoF6, ReF6, and WF6; reaction of MoF6(-) with ReF6 and reaction of Ar+ with MoF6.电子与六氟化钼、六氟化铼和六氟化钨的附着;六氟钼阴离子与六氟化铼的反应以及氩离子与六氟化钼的反应。
J Chem Phys. 2006 Jun 14;124(22):224306. doi: 10.1063/1.2202851.
2
A new instrument for thermal electron attachment at high temperature: NF3 and CH3Cl attachment rate constants up to 1100 K.一种用于高温下热电子附着的新型仪器:高达1100 K时NF₃和CH₃Cl的附着速率常数
Rev Sci Instrum. 2009 Mar;80(3):034104. doi: 10.1063/1.3097185.
3
Electron attachment to halomethanes at high temperature: CH(2)Cl(2), CF(2)Cl(2), CH(3)Cl, and CF(3)Cl attachment rate constants up to 1100 K.高温下卤代甲烷的电子附着:高达1100K时二氯甲烷、二氟二氯甲烷、氯甲烷和三氟氯甲烷的附着速率常数
J Chem Phys. 2009 Aug 28;131(8):084302. doi: 10.1063/1.3212598.
4
Electron attachment and detachment and the electron affinity of cyclo-C4F8.环丁烷四氟化物的电子附着、脱离及电子亲和势
J Chem Phys. 2004 Apr 15;120(15):7024-8. doi: 10.1063/1.1683082.
5
Kinetics of electron attachment to OH and HNO3 and mutual neutralization of Ar+ with NO2(-) and NO3(-) at 300 and 500 K.在 300 和 500 K 时,OH 和 HNO3 的电子附加动力学以及 Ar+与 NO2(-)和 NO3(-)的中性化反应。
J Chem Phys. 2012 Mar 28;136(12):124307. doi: 10.1063/1.3694876.
6
Electron attachment to Ni(PF(3))(4) and Pt(PF(3))(4).电子与Ni(PF₃)₄和Pt(PF₃)₄的附着。
J Chem Phys. 2008 Mar 14;128(10):104303. doi: 10.1063/1.2831391.
7
Electron attachment and detachment: electron affinities of isomers of trifluoromethylbenzonitrile.电子附着与脱离:三氟甲基苯甲腈异构体的电子亲和势
J Chem Phys. 2004 Nov 22;121(20):9993-8. doi: 10.1063/1.1806418.
8
Electron and ion reactions with hexamethyldisiloxane and pentamethyldisiloxane.电子和离子与六甲基二硅氧烷和五甲基二硅氧烷的反应。
J Chem Phys. 2007 Oct 14;127(14):144308. doi: 10.1063/1.2774984.
9
Electron attachment to C7F14, thermal detachment from C7F14(-), the electron affinity of C7F14, and neutralization of C7F14(-) by Ar+.电子与 C7F14 的结合,C7F14(-) 的热离解,C7F14 的电子亲和能,以及 C7F14(-) 被 Ar+ 的中和。
J Phys Chem A. 2012 Oct 25;116(42):10293-300. doi: 10.1021/jp306843a. Epub 2012 Oct 16.
10
Electron attachment to propargyl chloride, 305-540 K.电子与烯丙基氯加成反应,305-540 K。
J Chem Phys. 2010 Oct 21;133(15):154306. doi: 10.1063/1.3505144.

引用本文的文献

1
Electron interaction with copper(II) carboxylate compounds.电子与羧酸铜(II)化合物的相互作用。
Beilstein J Nanotechnol. 2018 Feb 1;9:384-398. doi: 10.3762/bjnano.9.38. eCollection 2018.