Saha Sujata, Chowdhury Paramita Saha, Patra Amitava
Sol-Gel Division, Central Glass & Ceramic Research Institute, Jadavpur, Kolkata 700 032, India.
J Phys Chem B. 2005 Feb 24;109(7):2699-702. doi: 10.1021/jp0462106.
Here, we report the role of crystal structure and crystal size on the photoluminescence properties of Ce3+ ions in Y2SiO5 nanocrystals. The emission at 430 nm (5d1 --> 4f1) and lifetime of the excited state of Ce3+ ion doped Y2SiO5 nanocrystals are found to be sensitive to the crystal structure, crystal size, and dopant concentration. It is found that the overall lifetime tau of 0.5 mol % Ce doped Y2SiO5 nanocrystals are 8.78 and 3.45 ns for 1000 and 1100 degrees C heat-treated samples with the same crystal structure (X1-Y2SiO5 phase), respectively. However, a significant increase in the overall lifetime (35.21 ns) is observed for the 1300 degrees C annealed 0.5 mol % Ce doped Y2SiO5 sample having a different crystal structure (X2-Y2SiO5 phase). We found that the decay kinetic is biexponential. It is explained that the fast component arises due to sequential hole-electron capture on the luminescent ions and the slow component arises from isolated ions. Our analysis suggests that modifications of radiative and nonraditive relaxation mechanisms are due to local symmetry structure of the host lattice and crystal size, respectively.
在此,我们报道了晶体结构和晶体尺寸对Y2SiO5纳米晶体中Ce3+离子光致发光特性的影响。发现Ce3+离子掺杂的Y2SiO5纳米晶体在430 nm处的发射(5d1 --> 4f1)以及激发态寿命对晶体结构、晶体尺寸和掺杂剂浓度敏感。结果表明,对于具有相同晶体结构(X1 - Y2SiO5相)的1000℃和1100℃热处理的0.5 mol% Ce掺杂Y2SiO5纳米晶体,其总寿命τ分别为8.78 ns和3.45 ns。然而,对于具有不同晶体结构(X2 - Y2SiO5相)的1300℃退火的0.5 mol% Ce掺杂Y2SiO5样品,观察到总寿命显著增加(35.21 ns)。我们发现衰减动力学是双指数的。据解释,快速成分是由于发光离子上的顺序空穴 - 电子捕获引起的,而慢速成分则来自孤立离子。我们的分析表明,辐射和非辐射弛豫机制的改变分别归因于主体晶格的局部对称结构和晶体尺寸。