Guo Jianchang, She Chunxing, Lian Tianquan
Department of Chemistry, Emory University, Atlanta, Georgia 30322, USA.
J Phys Chem B. 2005 Apr 21;109(15):7095-102. doi: 10.1021/jp044579p.
Ultrafast transient IR spectroscopy has been used to examine the effect of doping on interfacial electron transfer (ET) dynamics in Re(dpbpy)(CO)(3)Cl (dpbpy = 4,4'-(CH(2)PO(OH)(2))2-2,2'-bipyridine) (ReC1PO(3)) sensitized ATO (Sb:SnO(2)) nanocrystalline thin films. In films consisting of particles with 0%, 2% and 10% Sb dopant, the rates of electron injection from the adsorbate excited state to ATO were independent of and the rates of the recombination increased with the doping level. The observed similar forward electron injection rates were attributed to negligible changes of available accepting states in the conduction band at the doping levels studied. The dependence of the recombination rate on conduction band electron density and a possible mechanism for the recombination process were discussed.
超快瞬态红外光谱已被用于研究掺杂对Re(dpbpy)(CO)(3)Cl（dpbpy = 4,4'-(CH(2)PO(OH)(2))2-2,2'-联吡啶）（ReC1PO(3)）敏化的ATO（Sb:SnO(2)）纳米晶薄膜中界面电子转移（ET）动力学的影响。在由含0%、2%和10% Sb掺杂剂的颗粒组成的薄膜中，从吸附质激发态到ATO的电子注入速率与掺杂水平无关，而复合速率随掺杂水平增加。观察到的相似的正向电子注入速率归因于在所研究的掺杂水平下导带中可用接受态的变化可忽略不计。讨论了复合速率对导带电子密度的依赖性以及复合过程的可能机制。
