Kuepper K, Falub M C, Prince K C, Galakhov V R, Troyanchuk I O, Chiuzbaian S G, Matteucci M, Wett D, Szargan R, Ovechkina N A, Mukovskii Ya M, Neumann M
Department of Physics, University of Osnabrück, Barbarastr. 7, D-49069 Osnabrück, Germany.
J Phys Chem B. 2005 May 19;109(19):9354-61. doi: 10.1021/jp044447w.
The electronic properties of a series of colossal magnetoresistance (CMR) compounds, namely LaMnO3, La(1-x)Ba(x)(MnO3 (0.2 < or = x < or = 0.55), La(0.76)Ba(0.24)Mn(0.84)Co(0.16)O3, and La(0.76)Ba(0.24)Mn(0.78)Ni(0.22)O3, have been investigated in a detailed spectroscopic study. A combination of X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES), X-ray absorption spectroscopy (XAS), and resonant inelastic X-ray scattering (RIXS) was used to reveal a detailed picture of the electronic structure in the presence of Ba, Co, and Ni doping in different concentrations. The results are compared with available theory. The valence band of La(1-x)()Ba(x)MnO3 (0 < or = x < or = 0.55) is dominated by La 5p, Mn 3d, and O 2p states, and strong hybridization between Mn 3d and O 2p states is present over the whole range of Ba concentrations. Co-doping at the Mn site leads to an increased occupancy of the e(g) states near the Fermi energy and an increase in the XPS valence band intensity between 0.5 and 5 eV, whereas the Ni-doped sample shows a lower density of occupied states near the Fermi energy. The Ni d states are located in a band spanning the energy range of 1.5-5 eV. XAS spectra indicate that the hole doping leads to mixed Mn 3d-O 2p states. Furthermore, RIXS at the Mn L edge has been used to probe d-d transitions and charge-transfer excitations in La(1-x)Ba(x)MnO3.
对一系列巨磁电阻(CMR)化合物,即LaMnO3、La(1 - x)Ba(x)MnO3(0.2 ≤ x ≤ 0.55)、La(0.76)Ba(0.24)Mn(0.84)Co(0.16)O3和La(0.76)Ba(0.24)Mn(0.78)Ni(0.22)O3的电子性质进行了详细的光谱研究。结合使用X射线光电子能谱(XPS)、X射线发射光谱(XES)、X射线吸收光谱(XAS)和共振非弹性X射线散射(RIXS)来揭示在不同浓度的Ba、Co和Ni掺杂情况下电子结构的详细情况。将结果与现有理论进行了比较。La(1 - x)Ba(x)MnO3(0 ≤ x ≤ 0.55)的价带由La 5p、Mn 3d和O 2p态主导,并且在整个Ba浓度范围内Mn 3d和O 2p态之间存在强烈的杂化。在Mn位点进行Co掺杂会导致费米能级附近e(g)态的占据增加以及XPS价带强度在0.5至5 eV之间增加,而Ni掺杂样品在费米能级附近显示出较低的占据态密度。Ni d态位于一个跨越1.5 - 5 eV能量范围的能带中。XAS光谱表明空穴掺杂导致了混合的Mn 3d - O 2p态。此外,Mn L边的RIXS已被用于探测La(1 - x)Ba(x)MnO3中的d - d跃迁和电荷转移激发。