Fu Qiang, Wagner Thomas
Max-Planck-Institut für Metallforschung, Heisenbergstrasse 3, D-70569 Stuttgart, Germany.
J Phys Chem B. 2005 Jun 16;109(23):11697-705. doi: 10.1021/jp050601i.
We studied chemical reactions between ultrathin metal films (Al, Cr, Fe, Mo) and single-crystal oxides (SrTiO3 (100), TiO2 (110)) with X-ray photoelectron spectroscopy (XPS). The work function of the metal and the electron density in the oxide strongly influence the reaction onset temperature (T(RO)), where metal oxidation is first observed, and the rate of metal oxidation at the metal/oxide interfaces. The Fermi levels of the two contacting phases affect both the space charges formed at the interfaces and the diffusion of ionic defects across the interfaces. These processes, which determine metal oxidation kinetics at relatively low temperatures, can be understood in the framework of the Cabrera-Mott theory. The results suggest that the interfacial reactivity is tunable by modifying the Fermi level (E(F)) of both contacting phases. This effect is of great technological importance for a variety of devices with heterophase boundaries.
我们用X射线光电子能谱(XPS)研究了超薄金属薄膜(铝、铬、铁、钼)与单晶氧化物(SrTiO3(100)、TiO2(110))之间的化学反应。金属的功函数和氧化物中的电子密度强烈影响反应起始温度(T(RO)),在该温度下首次观察到金属氧化,以及金属/氧化物界面处金属氧化的速率。两个接触相的费米能级既影响界面处形成的空间电荷,也影响离子缺陷在界面上的扩散。这些在相对低温下决定金属氧化动力学的过程,可以在卡布雷拉-莫特理论的框架内得到理解。结果表明,通过改变两个接触相的费米能级(E(F)),界面反应性是可调的。这种效应对于各种具有异相边界的器件具有重要的技术意义。