Zhang Jun, Jiang Feihong, Yang Yongdong, Li Jianping
Department of Physics, Yantai University, Yantai, 264005, PRC.
J Phys Chem B. 2005 Jul 14;109(27):13143-7. doi: 10.1021/jp0511247.
Mass production of quasi-one-dimensional gallium oxide nanobelts is accomplished through graphite-thermal reduction of a mixture of gallium oxide powders and SnO2 nanopowders under controlled experimental conditions. Sn nanoparticles are located at or close to the tips of the nanobelts and served as the catalyst for the nanobelt growth by a vapor-liquid-solid mechanism. The morphology and microstructure of the nanobelts were characterized by scanning electron microscopy and high-resolution transmission electron microscopy. The Ga2O3 nanobelts grow along the [104] direction, the widths ranged from several tens to several hundreds of nanometers, and the lengths ranged from several tens to several hundreds of micrometers. The growth of Ga2O3 nanobelts is initiated by Sn nanoparticles via a catalyst-assisted vapor-liquid-solid process, which makes it possible to control the sizes of Ga2O3 nanobelts.
在可控的实验条件下，通过对氧化镓粉末和二氧化锡纳米粉末的混合物进行石墨热还原，实现了准一维氧化镓纳米带的大规模生产。锡纳米颗粒位于纳米带的尖端或靠近尖端的位置，并通过气-液-固机制作为纳米带生长的催化剂。通过扫描电子显微镜和高分辨率透射电子显微镜对纳米带的形态和微观结构进行了表征。Ga2O3纳米带沿[104]方向生长，宽度从几十纳米到几百纳米不等，长度从几十微米到几百微米不等。Ga2O3纳米带的生长是由锡纳米颗粒通过催化剂辅助的气-液-固过程引发的，这使得控制Ga2O3纳米带的尺寸成为可能。
