Bhimarasetti Gopinath, Sunkara Mahendra K
J Phys Chem B. 2005 Sep 1;109(34):16219-22. doi: 10.1021/jp0529873.
Bismuth (Bi) nanowires are interesting one-dimensional systems due to the significant quantum confinement effects exhibited as a function of the wire diameters, and synthesizing Bi nanowires with sizes below 20 nm is of fundamental importance in understanding quantum effects. Here, we report a bulk synthesis method to synthesize ultrafine Bi nanowires and a new morphology of bismuth nanostructures, tapered whiskers. These tapered whiskers are about 10-20 mum in length and have diameters of 5-10 nm at the tip and 250-500 nm at the base. The synthesis method is based upon the multiple nucleation and basal growth of nanometer scale nuclei from molten gallium (Ga) melts that result from the low solubility of Bi in Ga and the low eutectic temperature of the Ga-Bi binary system. Adopting different methods of supplying bismuth and using variations in simple heating and cooling, we have synthesized a variety of bismuth nanostructures.
铋（Bi）纳米线是有趣的一维系统，因为其表现出显著的量子限制效应，该效应是线直径的函数，并且合成尺寸小于20nm的铋纳米线对于理解量子效应至关重要。在此，我们报告一种批量合成方法，用于合成超细铋纳米线以及一种新形态的铋纳米结构——锥形晶须。这些锥形晶须长度约为10 - 20μm，尖端直径为5 - 10nm，基部直径为250 - 500nm。该合成方法基于纳米尺度晶核从熔融镓（Ga）熔体中的多次成核和基面生长，这是由于铋在镓中的低溶解度以及Ga - Bi二元体系的低共晶温度导致的。通过采用不同的铋供应方法以及简单加热和冷却的变化，我们合成了多种铋纳米结构。
