氧对氮化镓薄膜中晶态-非晶态转变的影响。

Influence of oxygen on the crystalline-amorphous transition in gallium nitride films.

作者信息

Tran Nguyen H, Lamb Robert N, Lai Lee Jene, Yang Yaw Wen

机构信息

School of Chemistry, University of New South Wales, Sydney 2052, Australia.

出版信息

J Phys Chem B. 2005 Oct 6;109(39):18348-51. doi: 10.1021/jp052177r.

DOI:10.1021/jp052177r

PMID:16853361

Abstract

Oxygen is a common impurity in nitride-based materials that affects the properties of technologically important materials such as gallium nitride semiconductors. In this work, the influence of oxygen on the structural evolution of GaN films is investigated using near-edge X-ray absorption fine structure (NEXAFS). The combined spectra of Ga L3-edge, N K-edge, and O K-edge indicate that the gallium coordination, formed by a mixture of oxide and nitride bonds, is directly dependent on the concentration of oxygen in the films. Below 24 atom % oxygen, gallium atoms are tetrahedrally coordinated within the films, while at higher concentrations the octahedral environment persists.

摘要

氧是氮化物基材料中常见的杂质，会影响诸如氮化镓半导体等具有重要技术意义的材料的性能。在这项工作中，使用近边X射线吸收精细结构（NEXAFS）研究了氧对氮化镓薄膜结构演变的影响。镓L3边、氮K边和氧K边的组合光谱表明，由氧化物键和氮化物键混合形成的镓配位直接取决于薄膜中的氧浓度。在氧含量低于24原子%时，薄膜中的镓原子呈四面体配位，而在较高浓度下，八面体环境持续存在。