Kar Soumitra, Satpati B, Satyam P V, Chaudhuri S
Department of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700 032, India.
J Phys Chem B. 2005 Oct 20;109(41):19134-8. doi: 10.1021/jp052600w.
Rapid production of single crystalline CdS nanoribbons with hexagonal wurtzite phase has been achieved by thermal evaporation of CdS powder on Si wafers. The flow rate of the carrier (Ar) gas along with the synthesis temperature plays an important role in defining the size and shape of the CdS nanoribbons. Scanning electron and transmission electron microscopic observations revealed the nanoribbons to have a flat end as well as side surfaces which will make it ideal for optoelectronic devices such as nanolasers and light emitting diodes based on individual nanoribbons. The nanoribbons have widths within 200-400 nm and lengths approximately a few hundred micrometers. Room-temperature photoluminescence measurements show green emission centered at approximately 525 nm which may be ascribed to the near band edge emission. The Raman spectra of the CdS nanoribbons show peaks around 304, 609, 915, and 1220 cm(-1) corresponding to the first-, second-, third-, and fourth-order longitudinal optical phonon modes, respectively.
通过在硅片上热蒸发硫化镉粉末，已实现了具有六方纤锌矿相的单晶硫化镉纳米带的快速制备。载气（氩气）的流速以及合成温度在确定硫化镉纳米带的尺寸和形状方面起着重要作用。扫描电子显微镜和透射电子显微镜观察表明，纳米带具有平端以及侧面，这使其非常适合用于基于单个纳米带的光电器件，如纳米激光器和发光二极管。纳米带的宽度在200 - 400纳米范围内，长度约为几百微米。室温光致发光测量显示，绿色发射峰集中在约525纳米处，这可能归因于近带边发射。硫化镉纳米带的拉曼光谱在约304、609、915和1220厘米⁻¹处显示出峰，分别对应于一阶、二阶、三阶和四阶纵向光学声子模式。
