Guo Donghui, Guo Qinlin, Altman M S, Wang E G
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
J Phys Chem B. 2005 Nov 10;109(44):20968-72. doi: 10.1021/jp054460w.
Ultrathin chromium oxide films were prepared on a W(100) surface under ultrahigh-vacuum conditions and investigated in situ by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy electron diffraction. The results show that, at Cr coverage of less than 1 monolayer, CrO2 is formed by oxidizing pre-deposited Cr at 300-320 K in approximately 10(-7) mbar oxygen. However, an increase of temperature causes formation of Cr2O3. At Cr coverage above 1 monolayer, only Cr2O3 is detected.
在超高真空条件下，在W(100)表面制备了超薄氧化铬薄膜，并通过X射线光电子能谱、紫外光电子能谱和低能电子衍射进行了原位研究。结果表明，在铬覆盖度小于1个单层时，在约10⁻⁷毫巴的氧气中，于300 - 320 K氧化预沉积的铬可形成CrO₂。然而，温度升高会导致形成Cr₂O₃。在铬覆盖度高于1个单层时，仅检测到Cr₂O₃。
