Yang Shangfeng, Zalibera Michal, Rapta Peter, Dunsch Lothar
Group of Electrochemistry and Conducting Polymers Leibniz-Institute for Solid State and Materials Research (IFW) Dresden, 01171 Dresden, Germany.
Chemistry. 2006 Oct 16;12(30):7848-55. doi: 10.1002/chem.200501578.
The electrochemistry of three new clusterfullerenes Dy3N@C2n (2n=78, 80), namely two isomers of Dy3N@C80 (I and II) as well as Dy3N@C78 (II), have been studied systematically including their redox-reaction mechanism. The cyclic voltammogram of Dy3N@C80 (I) (Ih) exhibits two electrochemically irreversible but chemically reversible reduction steps and one reversible oxidation step. Such a redox pattern is quite different from that of Sc3N@C80 (I), and this can be understood by considering the difference in the charge transfer from the encaged cluster to the cage. A double-square reaction scheme is proposed to explain the observed redox-reaction behavior, which involves the charge-induced reversible rearrangement of the Dy3N@C80 (I) monoanion. The first oxidation potential of Dy3N@C80 (II) (D5h) has a negative shift of 290 mV relative to that of Dy3N@C80 (I) (Ih), indicating that lowering the molecular symmetry of the clusterfullerene cage results in a prominent increase in the electron-donating property. The first and second reduction potentials of Dy3N@C78 (II) are negatively shifted relative to those of Dy3N@C80 (I, II), pointing to the former's lowered electron-accepting ability. The significant difference in the electrochemical energy gaps of Dy3N@C80 (I), Dy3N@C80 (II), and Dy3N@C78 (II) is consistent with the difference in their optical energy gaps.
三种新型团簇富勒烯Dy3N@C2n(2n = 78, 80),即Dy3N@C80的两种异构体(I和II)以及Dy3N@C78(II)的电化学性质,包括其氧化还原反应机理,已得到系统研究。Dy3N@C80(I)(Ih)的循环伏安图显示出两个电化学不可逆但化学可逆的还原步骤和一个可逆氧化步骤。这种氧化还原模式与Sc3N@C80(I)的模式有很大不同,这可以通过考虑笼内团簇向笼的电荷转移差异来理解。提出了一个双平方反应方案来解释观察到的氧化还原反应行为,该方案涉及Dy3N@C80(I)单阴离子的电荷诱导可逆重排。Dy3N@C80(II)(D5h)的第一氧化电位相对于Dy3N@C80(I)(Ih)负移290 mV,表明降低团簇富勒烯笼的分子对称性会导致供电子性能显著增加。Dy3N@C78(II)的第一和第二还原电位相对于Dy3N@C80(I, II)负移,表明前者的电子接受能力降低。Dy3N@C80(I)、Dy3N@C80(II)和Dy3N@C78(II)的电化学能隙的显著差异与它们的光学能隙差异一致。