Setlow P
Department of Molecular, Microbial and Structural Biology, University of Connecticut Health Center, Farmington, 06030-3305, USA.
J Appl Microbiol. 2006 Sep;101(3):514-25. doi: 10.1111/j.1365-2672.2005.02736.x.
A number of mechanisms are responsible for the resistance of spores of Bacillus species to heat, radiation and chemicals and for spore killing by these agents. Spore resistance to wet heat is determined largely by the water content of spore core, which is much lower than that in the growing cell protoplast. A lower core water content generally gives more wet heat-resistant spores. The level and type of spore core mineral ions and the intrinsic stability of total spore proteins also play a role in spore wet heat resistance, and the saturation of spore DNA with alpha/beta-type small, acid-soluble spore proteins (SASP) protects DNA against wet heat damage. However, how wet heat kills spores is not clear, although it is not through DNA damage. The alpha/beta-type SASP are also important in spore resistance to dry heat, as is DNA repair in spore outgrowth, as Bacillus subtilis spores are killed by dry heat via DNA damage. Both UV and gamma-radiation also kill spores via DNA damage. The mechanism of spore resistance to gamma-radiation is not well understood, although the alpha/beta-type SASP are not involved. In contrast, spore UV resistance is due largely to an alteration in spore DNA photochemistry caused by the binding of alpha/beta-type SASP to the DNA, and to a lesser extent to the photosensitizing action of the spore core's large pool of dipicolinic acid. UV irradiation of spores at 254 nm does not generate the cyclobutane dimers (CPDs) and (6-4)-photoproducts (64PPs) formed between adjacent pyrimidines in growing cells, but rather a thymidyl-thymidine adduct termed spore photoproduct (SP). While SP is formed in spores with approximately the same quantum efficiency as that for generation of CPDs and 64PPs in growing cells, SP is repaired rapidly and efficiently in spore outgrowth by a number of repair systems, at least one of which is specific for SP. Some chemicals (e.g. nitrous acid, formaldehyde) again kill spores by DNA damage, while others, in particular oxidizing agents, appear to damage the spore's inner membrane so that this membrane ruptures upon spore germination and outgrowth. There are also other agents such as glutaraldehyde for which the mechanism of spore killing is unclear. Factors important in spore chemical resistance vary with the chemical, but include: (i) the spore coat proteins that likely react with and detoxify chemical agents; (ii) the relative impermeability of the spore's inner membrane that restricts access of exogenous chemicals to the spore core; (iii) the protection of spore DNA by its saturation with alpha/beta-type SASP; and (iv) DNA repair for agents that kill spores via DNA damage. Given the importance of the killing of spores of Bacillus species in the food and medical products industry, a deeper understanding of the mechanisms of spore resistance and killing may lead to improved methods for spore destruction.
多种机制导致芽孢杆菌属的芽孢对热、辐射和化学物质具有抗性,以及这些因素对芽孢的杀灭作用。芽孢对湿热的抗性很大程度上取决于芽孢核心的含水量,该含水量远低于生长细胞原生质体中的含水量。较低的核心含水量通常会产生更耐热湿的芽孢。芽孢核心矿物离子的水平和类型以及芽孢总蛋白的内在稳定性也在芽孢对湿热的抗性中发挥作用,并且α/β型小的、酸溶性芽孢蛋白(SASP)使芽孢DNA饱和可保护DNA免受湿热损伤。然而,湿热如何杀死芽孢尚不清楚,尽管不是通过DNA损伤。α/β型SASP在芽孢对干热的抗性中也很重要,芽孢萌发过程中的DNA修复同样重要,因为枯草芽孢杆菌芽孢会因DNA损伤而被干热杀死。紫外线和γ辐射也通过DNA损伤杀死芽孢。尽管不涉及α/β型SASP,但芽孢对γ辐射的抗性机制尚不清楚。相比之下,芽孢对紫外线的抗性很大程度上是由于α/β型SASP与DNA结合导致芽孢DNA光化学发生改变,以及在较小程度上是由于芽孢核心中大量吡啶二羧酸的光敏作用。在254nm波长下对芽孢进行紫外线照射不会产生生长细胞中相邻嘧啶之间形成的环丁烷二聚体(CPD)和(6-4)-光产物(64PP),而是形成一种称为芽孢光产物(SP)的胸苷-胸苷加合物。虽然SP在芽孢中形成的量子效率与生长细胞中CPD和64PP的产生效率大致相同,但在芽孢萌发过程中,SP会被多种修复系统快速且有效地修复,其中至少有一种系统对SP具有特异性。一些化学物质(如亚硝酸、甲醛)同样通过DNA损伤杀死芽孢,而其他物质,特别是氧化剂,似乎会破坏芽孢的内膜,从而使该膜在芽孢萌发和生长时破裂。还有其他一些物质,如戊二醛,其杀死芽孢的机制尚不清楚。芽孢对化学物质抗性的重要因素因化学物质而异,但包括:(i)可能与化学试剂反应并使其解毒的芽孢衣蛋白;(ii)芽孢内膜相对不渗透性限制了外源化学物质进入芽孢核心;(iii)α/β型SASP使芽孢DNA饱和对其起到保护作用;(iv)对于通过DNA损伤杀死芽孢的试剂进行DNA修复。鉴于在食品和医疗产品行业中杀死芽孢杆菌属芽孢的重要性,深入了解芽孢抗性和杀灭机制可能会带来改进的芽孢破坏方法。