Li Mao, Tang Shi, Shen Fangzhong, Liu Meirong, Xie Weijie, Xia Hong, Liu Linlin, Tian Leilei, Xie Zengqi, Lu Ping, Hanif Muddasir, Lu Dan, Cheng Gang, Ma Yuguang
Key Laboratory for Supramolecular Structure and Materials of Ministry of Education, Jilin University, Changchun 130012, China.
J Phys Chem B. 2006 Sep 14;110(36):17784-9. doi: 10.1021/jp0631230.
The electropolymerization behaviors of an electroactive and luminescent compound TCPC as precursor are studied. The resultant electrochemical deposition (ED) films are characterized by cyclic voltammetry (CV), UV-vis, fluorescence spectra, scanning electron microscopy (SEM), and atomic force microscopy (AFM). Under the CV mode with potential range of -0.5 to 0.85 V vs Ag/Ag(+), the coupling reactions between the carbazole units of TCPC are very efficient, while the fluorescent trifluorene segment in TCPC is chemically inert in this potential range, which results in a highly fluorescent film formation on indium tin oxide (ITO) electrode. The deposition parameters for preparing the TCPC-based ED films are optimized, and the best ED film gives the fluorescence efficiency of 45.5% with surface roughness of 2.8 nm and morphologic stability as heating to 180 degrees C. The light-emitting devices (LEDs) using this ED film as light emitting layer with structure ITO/ED film (approximately 100 nm)/Ba/Al achieve maximum luminescence and external quantum efficiency of 4224 cd/m(2) at 17 V and 0.72% at 11.5 V, respectively, which are better than the device using TCPC spin-coating films as emitting layer. The technique provides a facile route toward a patternable luminescent film and device because such luminescent ED films can be manipulatively deposited on the electrified electrode.
研究了一种具有电活性和发光性的化合物TCPC作为前驱体的电聚合行为。通过循环伏安法（CV）、紫外-可见光谱、荧光光谱、扫描电子显微镜（SEM）和原子力显微镜（AFM）对所得的电化学沉积（ED）膜进行了表征。在相对于Ag/Ag(+)的电位范围为-0.5至0.85 V的CV模式下，TCPC咔唑单元之间的偶联反应非常有效，而TCPC中的荧光三芴片段在此电位范围内化学惰性，这导致在氧化铟锡（ITO）电极上形成高度荧光的膜。优化了制备基于TCPC的ED膜的沉积参数，最佳的ED膜在加热至180℃时荧光效率为45.5%，表面粗糙度为2.8 nm且形态稳定。以这种ED膜作为发光层、结构为ITO/ED膜（约100 nm）/Ba/Al的发光器件（LED）在17 V时的最大发光强度为4224 cd/m²，在11.5 V时的外量子效率为0.72%，分别优于以TCPC旋涂膜作为发光层的器件。该技术为制备可图案化的发光膜和器件提供了一条简便途径，因为这种发光ED膜可以可控地沉积在带电电极上。
