Zeng Z M, Feng J F, Wang Y, Han X F, Zhan W S, Zhang X-G, Zhang Z
State Key Laboratory of Magnetism & Laboratory of Microfabrication, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100080, China.
Phys Rev Lett. 2006 Sep 8;97(10):106605. doi: 10.1103/PhysRevLett.97.106605.
Because spin-flip length is longer than the electron mean-free path in a metal, past studies of spin-flip scattering are limited to the diffusive regime. We propose to use a magnetic double barrier tunnel junction to study spin-flip scattering in the nanometer sized spacer layer near the ballistic limit. We extract the voltage and temperature dependence of the spin-flip conductance Gs in the spacer layer from magnetoresistance measurements. In addition to spin scattering information including the mean-free path (70 nm) and the spin-flip length (1.0-2.6 microm) at 4.2 K, this technique also yields information on the density of states and quantum well resonance in the spacer layer.
由于自旋翻转长度比金属中的电子平均自由程长，过去对自旋翻转散射的研究仅限于扩散区域。我们建议使用磁性双势垒隧道结来研究接近弹道极限的纳米尺寸间隔层中的自旋翻转散射。我们从磁阻测量中提取间隔层中自旋翻转电导Gs的电压和温度依赖性。除了包括4.2 K时的平均自由程（70 nm）和自旋翻转长度（1.0 - 2.6微米）在内的自旋散射信息外，该技术还能提供间隔层中态密度和量子阱共振的信息。
