Seebauer Edmund G, Dev Kapil, Jung Michael Y L, Vaidyanathan Ramakrishnan, Kwok Charlotte T M, Ager Joel W, Haller Eugene E, Braatz Richard D
Department of Chemical and Biomolecular Engineering, University of Illinois, Urbana, IL 61801, USA.
Phys Rev Lett. 2006 Aug 4;97(5):055503. doi: 10.1103/PhysRevLett.97.055503. Epub 2006 Aug 2.
The technologically useful properties of a crystalline solid depend upon the concentration of defects it contains. Here we show that defect concentrations as deep as 0.5 microm within a semiconductor can be profoundly influenced by gas adsorption. Self-diffusion rates within silicon show that nitrogen atoms adsorbed at less than 1% of a monolayer lead to defect concentrations that vary controllably over several orders of magnitude. The results show that previous measurements of diffusion and defect thermodynamics in semiconductors may have suffered from neglect of adsorption effects.
晶体固体的技术有用特性取决于其所含缺陷的浓度。在此我们表明，半导体内部深达0.5微米处的缺陷浓度会受到气体吸附的深刻影响。硅中的自扩散速率表明，吸附的氮原子少于单分子层的1%时，会导致缺陷浓度在几个数量级范围内可控地变化。结果表明，先前对半导体中扩散和缺陷热力学的测量可能因忽视吸附效应而受到影响。
