Giazotto Francesco, Taddei Fabio, Beltram Fabio, Fazio Rosario
NEST CNR-INFM and Scuola Normale Superiore, I-56126 Pisa, Italy.
Phys Rev Lett. 2006 Aug 25;97(8):087001. doi: 10.1103/PhysRevLett.97.087001. Epub 2006 Aug 23.
We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets, the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.
我们表明，由于交叉安德烈夫反射的存在，在面内电流几何结构的磁性三层膜中可以获得非常大的负磁阻。这种自旋阀由夹在两个铁磁层之间的薄超导膜组成，这两个铁磁层的磁化可以平行或反平行排列。对于结构参数的适当选择以及近乎完全自旋极化的铁磁体，磁阻可以超过-80%。我们的结果对于利用铁磁体-超导体结构的自旋电子器件的设计和实现具有重要意义。
